A room-temperature gate-tunable bipolar valley Hall effect in molybdenum disulfide/tungsten diselenide heterostructures

نویسندگان

چکیده

Two-dimensional semiconductors have a valley degree of freedom that could be used as platform for future optoelectronic devices. The Hall effect, caused by electrons in different valleys having opposite Berry curvatures, is important making such devices, but has only been reported with plasmonic structures or at cryogenic temperatures, limiting practical application. Here we report the observation effect room temperature molybdenum disulfide/tungsten diselenide van der Waals heterostructure. We show magnitude and polarity heterostructure are gate tunable, which can attributed to contribution from holes layers. use this tunability create bipolar valleytronic transistor. A exhibit room-temperature electrically tunable polarity,

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ژورنال

عنوان ژورنال: Nature electronics

سال: 2021

ISSN: ['2520-1131']

DOI: https://doi.org/10.1038/s41928-021-00686-7